tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice 587BLY / a production type document page 1 of 3 revised 0 5 /201 6 n - p - n epitaxial planar transistor intended for use in class a, b and c operated mobile, industrial and military transmitters, wit h a supply voltage of 28 v. the transistor is resistance - stabilized, and tested under severe load mismatch conditions. the transistor is housed in a hermetically sealed t o - 60 package, with the emitter pin connected to case. quick reference data operation class f (mhz) p l (w) g p (db) d 3 /d 5 (db) i czs (ma) c .w. s.s.b b a C b 70 1.6 C 28 40 40 (pep) > 13 typ. 16 - typ. - 33 - 50 t o - 60 the emitter is connected to the case the top pins should not be bent voltages collector - base voltage (open emitter) peak v alue v cbom m ax . 65 v collector - emitter voltage (open base) v ceo max. 38 v emitter - base voltage (open collector) v ebo max. 4 v currents collector current (average) i c(av) max. 6 a collector current (peak value) f>1 mhz i cm max. 12 a temperatures storage temperature t stg - 65 to +200 0 c operating junction temperature t j max. 200 0 c thermal resistance thermal resistance from junction to mounting base v c =25v; i c =2.4 a; p tot = 60w; heat sink temperature = 25 0 c 587BLY r th j - mb max. 2.5 0 c/w 587BLY/a max. 3.1 0 c/w thermal resistance from mounting base to heatsink 0.6 0 c/w
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice 587BLY / a production type document page 2 of 3 revised 0 5 /201 6 breakdown voltages collector - base voltage v (br) cbo > 65 v open emitter; i c = 100ma collector - emitter sustaining voltage v (br) ceosust. > 38 v open base; i c = 200 ma 1* emitter - base voltage v (br)ebo > 4 v open collector; i e = 10 ma collector - emitter sustaining voltage v (br)cexsust. > 65 v reverse base; - v be = 1.5 v; i c =200 ma 1* collector - base cut - off current i cbo < 10 ma v cb = 60v collector - emitter cut - off current i ceo < 5 ma v ce = 30v collector - emitter cut - off current i cex < 10 ma v ce = 60v; - v be = 1.5 v transient energy e > 8 mws open base; l = 25mh; f = 50hz reverse base; - v be = 1.5v; r be = 33 ? e > 8 mws d.c current gain h fe > 20 i c = 5a; v ce =5v i c = 1a; v ce = 5v letter code colour a black h fe 20 - 30 b brown h fe 30 - 40 c white h fe 40 - 50 d orange h fe 50 - 60 saturation voltage 587BLY v cesat < 2.0 v i c = 5a; i b = 0.5a 587BLY/a < 2.5 v 1* pulsed through an inductor; l=25 mh; duty factor 50% transition frequency f t typ. 450 mhz v ce = 20v; i c = 6a collector capacitance at f = 1 mhz c ob < 85 pf i e = i e = 0; v cb = 30v feedback capacitance c re typ. 47 pf i c = 100 ma; v ce = 30v collector - stud capacitance c cs typ. 2 pf caution this device incorporates beryllium oxide, the dust of which is toxic. the device in entirely safe provided that it is not dismantle d . care should be taken to ensure that all those who may handle, use or dispose of this device are aware of its nature and of the necessary safety precautions. in p articular, it should never be thrown out with general industrial or domestic waste. disposal service devices requiring disposal may be returned to american microsemiconductor, inc. they must be separately and securely packed a nd clearly identified. if any are damaged or broken they must not be sent through the post. in this case; advice is available from: american microsemiconductor, inc. 133 kings road , madison, new jersey, 07940 usa
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice 587BLY / a production type document page 3 of 3 revised 0 5 /201 6 operation v ce class f p l g p d 3 /d 5 i czs ? c ? (v) (mhz) (w) (db) (db) (ma) (%) c.w. 30 b 70 40 13 - - 65 s.s.b. 28 a - b 1.6 - 28 40 (pep) typ. 16 typ. - 33 50 35 s.s.b. 1* 30 a - b 30 25 (pep) - min. - 30 - - the transistor is designed to withstand a mismatch with vswr 50:1, any phase, operating at 40 watts load power at f = 70 mhz, v ce = 30v and t h = 25 0 c in the recommended test circuit. 1* batch sample only
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